2SB367 Transistor
Marke
Hitachi
Form TO66
Form TO66
Germanium TRANSISTOR
Maximum Collector Power Dissipation (Pc): 4 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 85 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Maximum Collector Power Dissipation (Pc): 4 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 85 °C
Forward Current Transfer Ratio (hFE), MIN: 100