BDY57 Transistor
Marke
Diverse Hersteller
Form TO3
Form TO3
Material/Aufbau/Pol.: Silizium diff. Mesa NPN;
Form/Case/Outline: TO-3;
Daten/electr.data: I F: 6 A; U S: 0.5 V; Isp: 0.5 mA; ß (beta): 20-60; N: 175 W; Imax(Ic): 25 A; Umax(Ucb): 120 V; Umax(Uce): 80 V; f g(FT): 30 MHz; tmax j: 200 °C.
Form/Case/Outline: TO-3;
Daten/electr.data: I F: 6 A; U S: 0.5 V; Isp: 0.5 mA; ß (beta): 20-60; N: 175 W; Imax(Ic): 25 A; Umax(Ucb): 120 V; Umax(Uce): 80 V; f g(FT): 30 MHz; tmax j: 200 °C.